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Infineon | IRF6645TRPBF

Manufacturer Part #

IRF6645TRPBF

Single N-Channel 100 V 35 mOhm 20 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2442
Product Specification Section
Infineon IRF6645TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 2.2W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.7A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 18ns
Rise Time: 5ns
Fall Time: 5.1ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4.9V
Technology: Si
Height - Max: 0.53mm
Length: 3.95mm
Input Capacitance: 890pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,800
USA:
4,800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$2,760.00
USD
Quantity
Unit Price
4,800
$0.575
9,600+
$0.565
Product Variant Information section