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Infineon | IRFB4137PBF

Manufacturer Part #

IRFB4137PBF

Single N-Channel 300 V 69 mOhm 83 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFB4137PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 300V
Drain-Source On Resistance-Max: 69mΩ
Rated Power Dissipation: 341W
Qg Gate Charge: 83nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 38A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 34ns
Rise Time: 23ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Input Capacitance: 5168pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,110.00
USD
Quantity
Unit Price
50
$2.18
200
$2.14
750
$2.11
1,250
$2.10
2,500+
$2.06
Product Variant Information section