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Manufacturer Part #

IRFI1310NPBF

Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRFI1310NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.036Ω
Rated Power Dissipation: 56|W
Qg Gate Charge: 120nC
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,360.00
USD
Quantity
Unit Price
50
$0.72
250
$0.70
1,000
$0.68
2,500
$0.67
6,250+
$0.645