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Référence fabricant
IRFP250NPBF
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :25 par Tube Style d'emballage :TO-247AC Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2206 | ||||||||||
Infineon IRFP250NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFP250NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfp250npbf-infineon-5924691
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFP250NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfp250npbf-infineon-5924691
Infineon IRFP250NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.075Ω |
| Rated Power Dissipation: | 214W |
| Qg Gate Charge: | 123nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 30A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 41ns |
| Rise Time: | 43ns |
| Fall Time: | 33ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 20.3mm |
| Length: | 15.9mm |
| Input Capacitance: | 2159pF |
| Style d'emballage : | TO-247AC |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
The IRFP250NPBF is a Single N-Channel MOSFET. It comes in a TO-247AC package and is shipped in tubes.
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Style d'emballage :
TO-247AC
Méthode de montage :
Flange Mount