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Manufacturer Part #
IRFP4332PBF
Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:25 per Tube Package Style:TO-247AC Mounting Method:Through Hole | ||||||||||
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Infineon IRFP4332PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFP4332PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfp4332pbf-infineon-5557061
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFP4332PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfp4332pbf-infineon-5557061
Infineon IRFP4332PBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 250V |
| Drain-Source On Resistance-Max: | 33mΩ |
| Rated Power Dissipation: | 360W |
| Qg Gate Charge: | 150nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 57A |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 5V |
| Technology: | Advanced Process Technology |
| Height - Max: | 20.7mm |
| Length: | 15.87mm |
| Input Capacitance: | 5860pF |
| Package Style: | TO-247AC |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
25 per Tube
Package Style:
TO-247AC
Mounting Method:
Through Hole