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Infineon | IRFS4115TRLPBF

Manufacturer Part #

IRFS4115TRLPBF

Single N-Channel 150V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFS4115TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 12.1mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 99A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 41ns
Rise Time: 73ns
Fall Time: 39ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 5270pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$832.00
USD
Quantity
Unit Price
800
$1.04
1,600
$1.03
2,400
$1.02
3,200
$1.01
4,000+
$0.99
Product Variant Information section