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Référence fabricant
IRLU024NPBF
Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :75 par Tube Style d'emballage :TO-251 (IPAK) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2512 | ||||||||||
Infineon IRLU024NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Reprocessed previous announcement issued under Future PCN 96119, to update system for replacements.Detailed change information:Subject Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#).Reason :To Reflect the Correct Environmental Flag at Production Sites for Each Product.
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLU024NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlu024npbf-infineon-9173884
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLU024NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlu024npbf-infineon-9173884
Infineon IRLU024NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 45W |
| Qg Gate Charge: | 15nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 7.1ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 74ns |
| Fall Time: | 29ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 480pF |
| Style d'emballage : | TO-251 (IPAK) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
Logic-Level Gate Drive
Straight Lead
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
The IRLU024NPBF is a Single N-Channel MOSFET. It comes in a I-PAK package and is shipped in tubes.
Emballages disponibles
Qté d'emballage(s) :
75 par Tube
Style d'emballage :
TO-251 (IPAK)
Méthode de montage :
Through Hole