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  6. NTMD6N02R2G

onsemi | NTMD6N02R2G

Manufacturer Part #

NTMD6N02R2G

Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTMD6N02R2G - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 2|W
Qg Gate Charge: 20nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The NTMD6N02R2G is a part of NTMD6N02R2 series N−channel power MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOIC-8 package.

Features:

  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature Dual SOIC−8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • SOIC−8 Mounting Information Provided
  • Pb−Free Package is Available

Applications:

  • DC−DC Converters
  • Low Voltage Motor Control
  • Power Management in Portable and Battery−Powered Products
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$837.50
USD
Quantity
Unit Price
2,500
$0.335
5,000
$0.33
10,000
$0.325
12,500+
$0.32
Product Variant Information section