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Manufacturer Part #
LSIC1MO120E0160
LSIC1MO120 Series 1200 V 160 mOhm N-Ch. Enhancement-Mode SiC MOSFET - TO-247-3
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| Mfr. Name: | Littelfuse | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:450 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Littelfuse LSIC1MO120E0160 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Material Supplier Change
09/26/2025 Details and Download
Description:Littelfuse would like to inform you about the qualification of two second sources of epi wafer material for its 1200V and 1700V Silicon Carbide MOSFET series “LSIC1MO”. These second sources will allow us to provide better service by reducing our production lead time and ensuring safety of supply for the MOSFETs.
Part Status:
Active
Active
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Littelfuse LSIC1MO120E0160 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 22A |
| Input Capacitance: | 870pF |
| Power Dissipation: | 125W |
| Operating Temp Range: | -55°C to +150°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
31 Weeks
Quantity
Unit Price
450
$8.13
900+
$8.07
Product Variant Information section
Available Packaging
Package Qty:
450 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole