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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. NTH4L013N120M3S

onsemi | NTH4L013N120M3S

Manufacturer Part #

NTH4L013N120M3S

N-Channel 1200 V 151 A 682 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2514
Product Specification Section
onsemi NTH4L013N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 151A
Input Capacitance: 5813pF
Power Dissipation: 682W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
3,600
Factory Lead Time:
22 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$9,850.50
USD
Quantity
Unit Price
450+
$21.89
Product Variant Information section