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Manufacturer Part #
SCT50N120
N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCT50N120 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT50N120&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct50n120-stmicroelectronics-1073656
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT50N120&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct50n120-stmicroelectronics-1073656
STMicroelectronics SCT50N120 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 65A |
| Input Capacitance: | 1900pF |
| Power Dissipation: | 318W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
1
$18.41
5
$18.20
25
$17.98
100
$17.80
250+
$17.54
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole