
Référence fabricant
25LC640-I/P
25LC640 Series 64 Kbit (8K x 8) 5.5 V Through Hole SPI Bus Serial EEPROM - DIP-8
Microchip 25LC640-I/P - Spécifications du produit
Informations de livraison:
ECCN:
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Description of Change:Qualification of G600V as an additional/alternative mold compound material for selected products available in 40L, 8L,14L, 16L, 18L, 20L, 28L PDIP and 28L SPDIP packages at MMT assembly site using palladium coated copper wire with gold flash (CuPdAu) bond wire.Pre Change:Using GE800 mold compound material.Post Change:Using GE800 or G600V mold compound material.Reason for Change:To improve on time delivery performance by qualifying G600V as an addition/alternative mold compound material for selected PDIP and SPDIP packages at MMT assembly site. Because of factory shutdowns due to the COVID-19 pandemic, we must quickly implement this change or risk not having material to ship.Estimated First Ship Date:April 30, 2020 (date code: 2018)
Statut du produit:
Microchip 25LC640-I/P - Caractéristiques techniques
Memory Density: | 64kb |
Memory Organization: | 8 K x 8 |
Supply Voltage-Nom: | 4.5V to 5.5V |
Clock Frequency-Max: | 2MHz |
Write Cycle Time-Max (tWC): | 5ms |
Style d'emballage : | DIP-8 |
Méthode de montage : | Through Hole |
$Fonctionnalités et applications
The 25LC640A series of 64 kbit Serial Electrically Erasable PRO is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select [CS(bar)] input.
Communication to the device can be paused via the hold pin [HOLD(bar)]. While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25XX640A is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 8-lead TSSOP, DFN and TDFN.
Features:
- Max. Clock 10 MHz
- Low-Power CMOS Technology
- Max. Write Current: 5 mA at 5.5 V, 10 MHz
- Read Current: 5 mA at 5.5 V, 10 MHz
- Standby Current: 1 μA at 5.5 V
- 8192 x 8-bit Organization
- 32 Byte Page
- Self-Timed Erase and Write Cycles (5 ms max.)
- Block Write Protection
- Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
- Sequential Read
- High Reliability
- Endurance: 1,000,000 erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000 V
- Temperature Ranges Supported;
- Industrial (I): -40°C to +85°C
Learn more about the 25LC640 family of EEPROM
Emballages disponibles
Qté d'emballage(s) :
60 par Tube
Style d'emballage :
DIP-8
Méthode de montage :
Through Hole