onsemi | FOD817A300W

The FOD817A300W is a Part of FOD817 Series 5000 Vrms 80 % Phototransistor. this device consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package

The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Features:

• AC input response (FOD814 only)
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• Current transfer ratio in selected groups:
  • FOD817: 50–600%
  • FOD817A: 80–160%
  • FOD817B: 130–260%
  • FOD817C: 200–400%
  • FOD817D: 300–600%
• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000 Vrms
• Minimum BVCEO of 70 V guaranteed
• Higher operating temperatures

Applications:

• Power supply regulators
• Digital logic inputs
• Microprocessor inputs