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  4. Infineon — 100 V GaN Transistors

Infineon — 100 V GaN Transistors

Infineon

 

Infineon 100 V GaN Transistors

Compact, cool, and highly efficient for high-speed power switching

Infineon’s 100 V normally-off e-mode GaN transistors deliver outstanding switching performance in compact PQFN 3x3 and PQFN 3x5 packages. With very low on-state resistance, these devices are ideal for high-speed and high-frequency switching applications, enabling reduced deadtimes, higher efficiency, and passive cooling.

By supporting operation at high switching frequencies, Infineon GaN transistors reduce the need for bulky passive components, improving system density, reliability, and thermal performance. This makes them perfect for designs that demand small size, high power density, and exceptional efficiency.

Features

  • Voltage range: 60 – 120 V normally-off e-mode power transistors
  • Low RDS(on) for minimal conduction losses
  • No reverse recovery charge and reverse conduction capability
  • Low gate and output charge for fast switching
  • JEDEC-qualified for reliability in demanding environments
  • Compact package options: PQFN 3x3, PQFN 3x5

Benefits

  • Best-in-class power density for compact systems
  • Higher efficiency with reduced switching and driver losses
  • Improved thermal management, enabling smaller heatsinks
  • Supports smaller and lighter designs with fewer passive components
  • Enables faster motor response with reduced torque ripple
  • Lower BOM cost through component count reduction

Applications

  • Adapters and chargers
  • Audio amplifier solutions
  • AC-DC and DC-DC power conversion for telecom infrastructure

 

  • Low-power BDC/BLDC motor drives up to 72 V
  • Photovoltaic inverters
  • Telecommunications equipment

 


Infineon 100 V GaN Transistors

GaN Generic Video

 
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