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Manufacturer Part #

IKW75N65SS5XKSA1

IKW75N65SS5 Series 650 V 80 A 395 W Through Hole IGBT Transistor - PG-TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKW75N65SS5XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 395W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.35V
Turn-on Delay Time: 22ns
Turn-off Delay Time: 145ns
Qg Gate Charge: 164nC
Leakage Current: 100nA
Input Capacitance: 4000pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
30
Total
$7.32
USD
Quantity
Unit Price
1
$7.32
10
$7.21
40
$7.15
125
$7.09
400+
$6.97
Product Variant Information section