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STMicroelectronics | STGB15M65DF2

Manufacturer Part #

STGB15M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2532
Product Specification Section
STMicroelectronics STGB15M65DF2 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 30A
Power Dissipation-Tot: 136W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 60A
Collector - Emitter Saturation Voltage: 1.55V
Turn-on Delay Time: 24ns
Turn-off Delay Time: 93ns
Qg Gate Charge: 45nC
Reverse Recovery Time-Max: 142ns
Leakage Current: 250nA
Input Capacitance: 1250pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$835.00
USD
Quantity
Unit Price
1,000
$0.835
2,000
$0.825
3,000
$0.82
4,000
$0.815
5,000+
$0.80
Product Variant Information section