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Manufacturer Part #

BSC160N10NS3GATMA1

Single N-Channel 100 V 33 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2422
Product Specification Section
Infineon BSC160N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 60W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.8A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 22ns
Rise Time: 15ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.35mm
Input Capacitance: 1300pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,875.00
USD
Quantity
Unit Price
5,000
$0.375
10,000
$0.37
15,000
$0.365
20,000+
$0.36
Product Variant Information section