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Manufacturer Part #

BSZ068N06NSATMA1

Single N-Channel 60 V 6.8 mOhm 17 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2531
Product Specification Section
Infineon BSZ068N06NSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 6.8mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 12ns
Rise Time: 3ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 1200pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
25,000
USA:
25,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,800.00
USD
Quantity
Unit Price
5,000
$0.36
10,000
$0.355
15,000+
$0.35
Product Variant Information section