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onsemi | FDD5N60NZTM

Manufacturer Part #

FDD5N60NZTM

FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II™ Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2520
Product Specification Section
onsemi FDD5N60NZTM - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 83W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 4A
Turn-on Delay Time: 40ns
Turn-off Delay Time: 80ns
Rise Time: 50ns
Fall Time: 50ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 450pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD5N60NZTM is a part of FDD5N60 Series 600 V 2 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features:

  • RDS(on) = 1.65 ( Typ.)@ VGS = 10 V, ID = 2.0 A
  • Low Gate Charge ( Typ. 10nC)
  • Low Crss ( Typ. 5 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • ESD Improved Capability
  • RoHS Compliant

Applications:

  • High Efficient S.M.P.S
  • Active Power factor correction
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,237.50
USD
Quantity
Unit Price
2,500
$0.495
5,000
$0.49
10,000
$0.485
12,500+
$0.475
Product Variant Information section