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Référence fabricant
FDPF39N20
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
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| Nom du fabricant: | onsemi | ||||||||||
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Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Tube Style d'emballage :TO-220F Méthode de montage :Through Hole |
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onsemi FDPF39N20 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDPF39N20&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/fdpf39n20-onsemi-5055259
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDPF39N20&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/fdpf39n20-onsemi-5055259
onsemi FDPF39N20 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 66mΩ |
| Rated Power Dissipation: | 37|W |
| Qg Gate Charge: | 38nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 39A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 150ns |
| Rise Time: | 160ns |
| Fall Time: | 150ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Height - Max: | 16.07mm |
| Length: | 10.36mm |
| Input Capacitance: | 1640pF |
| Style d'emballage : | TO-220F |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The FDPF39N20 is a N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features:
- 39 A, 300 V, RDS(on) = 0.066 ?@VGS = 10 V
- Low gate charge ( typical 38 nC)
- Low Crss ( typical 57 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Emballages disponibles
Qté d'emballage(s) :
1000 par Tube
Style d'emballage :
TO-220F
Méthode de montage :
Through Hole