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onsemi | FQP17P06

Manufacturer Part #

FQP17P06

FQP17P06 Series -60 V -17 A 120 mOhm P-Channel QFET Mosfet - TO-220-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2552
Product Specification Section
onsemi FQP17P06 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.12Ω
Rated Power Dissipation: 79|W
Qg Gate Charge: 21nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FQP17P06 is a 60 V 0.12 Ω P-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • -17 A, -60
  • RDS(on)= 0.12 Ω@VGS= -10 V
  • Low gate charge ( typical 21 nC)
  • Low Crss (typical 80 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175ºC maximum junction temperature rating

Applications:

  • Automotive
  • DC/DC converters
  • High efficiency switching for power management
  • Portable and battery operated products.

 

 

Pricing Section
Global Stock:
15,094
USA:
15,094
On Order:Order inventroy details
9,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
25
Multiple Of:
1
Total
$23.63
USD
Quantity
Unit Price
25
$0.945
100
$0.92
300
$0.90
1,000
$0.88
3,000+
$0.835
Product Variant Information section