Manufacturer Part #
FQP17P06
FQP17P06 Series -60 V -17 A 120 mOhm P-Channel QFET Mosfet - TO-220-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | 2539 | ||||||||||
Product Specification Section
onsemi FQP17P06 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FQP17P06 - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 0.12Ω |
| Rated Power Dissipation: | 79|W |
| Qg Gate Charge: | 21nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The FQP17P06 is a 60 V 0.12 Ω P-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features:
- -17 A, -60
- RDS(on)= 0.12 Ω@VGS= -10 V
- Low gate charge ( typical 21 nC)
- Low Crss (typical 80 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175ºC maximum junction temperature rating
Applications:
- Automotive
- DC/DC converters
- High efficiency switching for power management
- Portable and battery operated products.
Pricing Section
Global Stock:
94
USA:
94
Factory Lead Time:
8 Weeks
Quantity
Unit Price
1
$1.03
40
$1.01
200
$0.97
750
$0.945
3,000+
$0.895
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount