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Manufacturer Part #
IAUCN04S7N005ATMA1
N-Channel 40 V 414 A 179 W Surface Mount AAutomotive Mosfet - PG-TDSON-8-43
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon IAUCN04S7N005ATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change:Introduction of an additional assembly production and final test location at PT Infineon Technologies Batam, Batam, Indonesia for AFET7 in PG-TDSON-8Reason for Change:Due to increasing demand for Infineon Automotive products exceeding current capacity in Melaka, Infineon is extending manufacturing capabilities to Batam and enabling flexible production for PG-TDSON-8 package
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IAUCN04S7N005ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/iaucn04s7n005atma1-infineon-8181849
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IAUCN04S7N005ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/iaucn04s7n005atma1-infineon-8181849
Infineon IAUCN04S7N005ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.55mΩ |
| Rated Power Dissipation: | 179W |
| Qg Gate Charge: | 127nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 414A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 34ns |
| Rise Time: | 9ns |
| Fall Time: | 21ns |
| Operating Temp Range: | -55°C to +175°C |
| Input Capacitance: | 8320pF |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount