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Infineon | IPD60N10S4L12ATMA1

Manufacturer Part #

IPD60N10S4L12ATMA1

IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60N10S4L12ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 94W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 60A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 20ns
Rise Time: 3ns
Fall Time: 21ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 2440pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,700.00
USD
Quantity
Unit Price
2,500
$0.68
5,000
$0.67
7,500
$0.665
10,000
$0.66
12,500+
$0.65
Product Variant Information section