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Infineon | IPN60R1K0CEATMA1

Manufacturer Part #

IPN60R1K0CEATMA1

600V 6.8A 1000 mΩ N-ch SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN60R1K0CEATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1Ω
Rated Power Dissipation: 5W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.8A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 60ns
Rise Time: 8ns
Fall Time: 13ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 280pF
Series: CoolMOS CE
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$690.00
USD
Quantity
Unit Price
3,000
$0.23
6,000
$0.225
30,000+
$0.22
Product Variant Information section