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Manufacturer Part #
IRF7313TRPBFXTMA1
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IRF7313TRPBFXTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF7313TRPBFXTMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irf7313trpbfxtma1-infineon-1181909
Infineon IRF7313TRPBFXTMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 29mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 22nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.5A |
| Turn-on Delay Time: | 8.1ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 8.9ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Input Capacitance: | 650pF |
| Series: | HEXFET |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Unit Price
4,000
$0.21
8,000
$0.205
20,000+
$0.199
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount