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Manufacturer Part #
IRF820PBF-BE3
500V,2.5A,3000MOHM,TO-220 - COO: TAIWAN
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Vishay IRF820PBF-BE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel. Products manufactured at Newport will be identified by a ?R? in the fourth position of the date code marked on the 2nd line of the partReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF820PBF-BE3&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irf820pbf-be3-vishay-1134182
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF820PBF-BE3&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irf820pbf-be3-vishay-1134182
Vishay IRF820PBF-BE3 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 50W |
| Qg Gate Charge: | 24nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.5A |
| Turn-on Delay Time: | 8ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 8.6ns |
| Fall Time: | 16ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 360pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole