Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IRFI530GPBF
MOSFET N-CHANNEL 100V
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Vishay IRFI530GPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFI530GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/en/it/p/semiconductors--discretes--transistors--mosfets/irfi530gpbf-vishay-3624095
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFI530GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/en/it/p/semiconductors--discretes--transistors--mosfets/irfi530gpbf-vishay-3624095
Vishay IRFI530GPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 160mΩ |
| Rated Power Dissipation: | 42|W |
| Qg Gate Charge: | 33nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole