Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IRFIBC20GPBF
Single N-Channel 600 V 30 W 18 nC Silicon Through Hole Mosfet - TO-220-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Std. Mfr. Pkg | ||||||||||
| Date Code: | |||||||||||
Vishay IRFIBC20GPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Tuesday September 30, 2025
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFIBC20GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irfibc20gpbf-vishay-C008042474
Vishay IRFIBC20GPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 4.4Ω |
| Rated Power Dissipation: | 30W |
| Qg Gate Charge: | 18nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 1.7A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 23ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 350pF |
Available Packaging
Package Qty:
1000 per Std. Mfr. Pkg