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Infineon | IRFR1018ETRPBF

Manufacturer Part #

IRFR1018ETRPBF

Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFR1018ETRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.4mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 69nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 79A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 55ns
Rise Time: 35ns
Fall Time: 46ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 2290pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
6000
Multiple Of:
2000
Total
$2,550.00
USD
Quantity
Unit Price
2,000
$0.435
4,000
$0.43
6,000
$0.425
8,000
$0.42
10,000+
$0.415
Product Variant Information section