onsemi | NDS332P

The NDS332P is a Part of NDS Series P-Channel logic level enhancement mode power field effect transistors are produced using, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

• -1 A, -20 V,
• RDS(ON) = 0.41O @ VGS= -2.7 V
• RDS(ON) = 0.3 O @ VGS = -4.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) 1.0V
• Proprietary package design using copper lead frame for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• Compact industry standard SOT-23 surface Mount package

Applications:

• Automation
• Broadband Access
• Broadband Modem
• Broadcast & Studio
• Building & Home Control
• Camcorder

View the Series of P-Channel MOSFET