Manufacturer Part #
R6011KNX
N-Channel 600 V 11 A 390 mOhm 53 W Through Hole Power MOSFET - TO-220
| | |||||||||||
| | |||||||||||
| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:100 per Bag Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
ROHM R6011KNX - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Doping/Material Change
10/24/2024 Details and Download
Fabrication site and Material Change
09/30/2022 Details and Download
PowerTransistor_Material change(organic film) and Addition of Shiga Factory for High Voltage MOSFET.Chamge Details: Before:Factory:RohmApollo ChikugoOrganic Film:Polyimide After:Factory:RohmApollo Chikugo and Rohm Shiga FactoryOrganic Film:Polyimide Reason:This transfer will increase production capacity and stabilize production which contribute to BCP, and the organic thin film materials contain an environmental regulation.
Part Status:
Active
Active
ROHM R6011KNX - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Rated Power Dissipation: | 53W |
| Drain Current: | 11A |
| Operating Temp Range: | -55°C to +150°C |
| Input Capacitance: | 740pF |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
100
$0.995
400
$0.965
1,500
$0.945
2,500
$0.935
5,000+
$0.905
Product Variant Information section
Available Packaging
Package Qty:
100 per Bag
Mounting Method:
Through Hole