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Manufacturer Part #
SI8817DB-T2-E1
MOSFET -20V 76MOHM@4.5V 2.9A P-CH G-III
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:MICRO-FOOT Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2421 | ||||||||||
Vishay SI8817DB-T2-E1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Manufacturing capacity transfer for LVM Commercial Power MOSFETsDescription of Change: Vishay Siliconix announces the manufacturing capacity transfer from Pelican USA to Simconix Shanghai for MICRO FOOT? 0.8x0.8 package for LVM Commercial Power MOSFETsReason for Change: Manufacturing Capacity ExpansionExpected Influence on Quality/Reliability/Performance: There will be no effect on the quality, reliability, or performance. There will be no changes in minimum and maximum values on the datasheet parameters and outline drawingTime Schedule:Start Shipment Date: Tuesday July 1, 2025
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI8817DB-T2-E1&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/si8817db-t2-e1-vishay-7028410
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI8817DB-T2-E1&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/si8817db-t2-e1-vishay-7028410
Vishay SI8817DB-T2-E1 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 76mΩ |
| Rated Power Dissipation: | 0.5|W |
| Qg Gate Charge: | 12.5nC |
| Package Style: | MICRO-FOOT |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
MICRO-FOOT
Mounting Method:
Surface Mount