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Manufacturer Part #
SIHF6N65E-GE3
E Series N Channel 700 V 0.6 Ω 48 nC Flange Mount Power MOSFET - TO-220FP
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220FP (TO-220FPAB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SIHF6N65E-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHF6N65E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/sihf6n65e-ge3-vishay-5052619
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHF6N65E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/sihf6n65e-ge3-vishay-5052619
Vishay SIHF6N65E-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 700V |
| Drain-Source On Resistance-Max: | 0.6Ω |
| Rated Power Dissipation: | 31|W |
| Qg Gate Charge: | 48nC |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Flange Mount