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Infineon | SPB11N60C3ATMA1

Manufacturer Part #

SPB11N60C3ATMA1

Single N-Channel 650 V 0.38 Ohm 60 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2434
Product Specification Section
Infineon SPB11N60C3ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 125W
Qg Gate Charge: 60nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 44ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.9V
Technology: Si
Height - Max: 4.57mm
Length: 10.31mm
Input Capacitance: 1200pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$960.00
USD
Quantity
Unit Price
1,000
$0.96
2,000
$0.945
3,000
$0.94
4,000
$0.935
5,000+
$0.915
Product Variant Information section