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Manufacturer Part #

STP5NK100Z

N-Channel 1 kV 3.7 Ohm SuperMESH3 Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2352
Product Specification Section
STMicroelectronics STP5NK100Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1000V
Drain-Source On Resistance-Max: 3.7Ω
Rated Power Dissipation: 125|W
Qg Gate Charge: 59nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STP5N100Z is a new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout.

In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$69.00
USD
Quantity
Unit Price
50
$1.38
200
$1.36
750
$1.34
1,500
$1.33
3,750+
$1.30
Product Variant Information section