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STMicroelectronics | STP5NK100Z

Manufacturer Part #

STP5NK100Z

N-Channel 1 kV 3.7 Ohm SuperMESH3 Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2445
Product Specification Section
STMicroelectronics STP5NK100Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1000V
Drain-Source On Resistance-Max: 3.7Ω
Rated Power Dissipation: 125|W
Qg Gate Charge: 59nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STP5N100Z is a new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout.

In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application
Pricing Section
Global Stock:
2,873
USA:
2,873
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
15
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$23.10
USD
Quantity
Unit Price
15
$1.54
50
$1.52
200
$1.50
500
$1.48
2,000+
$1.44
Product Variant Information section
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