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STMicroelectronics | STS10DN3LH5

Manufacturer Part #

STS10DN3LH5

Dual N-Channel 30 V 0.019 Ohm 10 A Surface Mount Power MOSFET - SOIC-8

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Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STS10DN3LH5 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 4.6nC
Mounting Method: Surface Mount
Features & Applications

The STS10DN3LH5 is a dual N-Channel STripFET™ V Power MOSFET.

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. It is available in a SO-8 package.

Features:

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Very low switching gate charge
  • High avalanche ruggedness
  • Low gate drive power losses

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$662.50
USD
Quantity
Unit Price
2,500
$0.265
7,500
$0.26
25,000+
$0.255
Product Variant Information section