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Référence fabricant
SST39SF040-70-4C-PHE
SST39SF Series 4 Mbit 512 K x 8 5 V Multi-Purpose Flash - PDIP-32
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :11 par Tube Style d'emballage :PDIP-32 Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2502 | ||||||||||
Microchip SST39SF040-70-4C-PHE - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
***UPDATE OF FPCN114115***Revision History: June 25, 2025: Issued initial notification. September 03, 2025: Issued final notification. Added note 1 in the pre and post change summary section. Attached the Qualification Report. Provided estimated first ship date to be on September 30, 2025.Description of Change: Qualification of EN4900GC as a new die attach material for SST39SF010A 70-4C-PHE, SST39SF020A-70-4C-PHE and SST39SF040-70-4C-PHE catalog part numbers (CPN) available in 32L PDIP (.600in) package.Reason for Change: To improved manufacturability by qualifying EN4900GC as a new die attach material.Estimated First Ship Date: 30 September 2025 (date code: 2540)
PCN Status:Initial NotificationDescription of Change:Qualification of EN4900GC as a new die attach material for SST39SF010A-70-4C-PHE, SST39SF020A-70-4C-PHE and SST39SF040-70-4C-PHE catalog part numbers (CPN) available in 32L PDIP (.600in) package.Die Attach Material: From 8340 to EN4900GCLead-Frame Material*: From C194 to A194Reason for Change:To improved manufacturability by qualifying EN4900GC as a new die attach material.Change Implementation Status:In ProgressEstimated Qualification Completion Date:October 2025
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SST39SF040-70-4C-PHE&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--memory--flash--norflash--nor/sst39sf040-70-4c-phe-microchip-3764149
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SST39SF040-70-4C-PHE&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--memory--flash--norflash--nor/sst39sf040-70-4c-phe-microchip-3764149
Microchip SST39SF040-70-4C-PHE - Caractéristiques techniques
| Memory Density: | 4Mb |
| Memory Organization: | 512 K x 8 |
| Supply Voltage-Nom: | 4.5V to 5.5V |
| Access Time-Max: | 70ns |
| Style d'emballage : | PDIP-32 |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The SST39SF040-70-4C-PHE is a part of SST39SF Series Multi-Purpose Flash Plus. It has an standard operating temperature ranging from -40°C to +85°C. It comes in PDIP-32 package.
IThe SST39SF040 is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Features:
- Organized as 128 K x8 / 256 K x8 / 512 K x8
- Single 4.5-5.5 V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 14 MHz)
- Active Current: 10 mA (typical)
- Standby Current: 30 µA (typical)
- Sector-Erase Capability
- Uniform 4 KByte sectors
- Fast Read Access Time:
- 55 ns
- 70 ns
- Latched Address and Data
- Automatic Write Timing
- Internal VPP Generation
- Fast Erase and Byte-Program
- Sector-Erase Time: 18 ms (typical)
- Chip-Erase Time: 70 ms (typical)
- Byte-Program Time: 14 µs (typical)
- End-of-Write Detection
- Toggle Bit
- Data# Polling
- TTL I/O Compatibility
- JEDEC Standard
- Flash EEPROM Pinouts and command sets
View the complete SST39SF Series of Multi-Purpose Flash
Emballages disponibles
Qté d'emballage(s) :
11 par Tube
Style d'emballage :
PDIP-32
Méthode de montage :
Through Hole