
Manufacturer Part #
FDD5N60NZTM
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II™ Mosfet - D2PAK-3
Product Specification Section
onsemi FDD5N60NZTM - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FDD5N60NZTM - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 2Ω |
Rated Power Dissipation: | 83W |
Qg Gate Charge: | 13nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 4A |
Turn-on Delay Time: | 40ns |
Turn-off Delay Time: | 80ns |
Rise Time: | 50ns |
Fall Time: | 50ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 450pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Features & Applications
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
6 Weeks
Quantity
Unit Price
2,500
$0.475
5,000
$0.47
7,500+
$0.465
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount