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onsemi | NTHD3100CT1G

Manufacturer Part #

NTHD3100CT1G

N&P-Channel 20 V 80 mOhm 2.3 nC 1.1 W SMT Power Mosfet - ChipFET-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTHD3100CT1G - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 2.3nC/7.4nC
Gate-Source Voltage-Max [Vgss]: 12V/8V
Drain Current: 2.9A/3.2A
Turn-on Delay Time: 6.3ns/5.8ns
Turn-off Delay Time: 9.6ns/16ns
Rise Time: 10.7ns/11.7ns
Fall Time: 1.5ns/12.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.2V/1.5V
Height - Max: 1.1mm
Length: 3.05mm
Input Capacitance: 165pF/680pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,335.00
USD
Quantity
Unit Price
3,000
$0.445
6,000
$0.44
9,000
$0.435
15,000+
$0.425
Product Variant Information section