
Manufacturer Part #
NTHD3100CT1G
N&P-Channel 20 V 80 mOhm 2.3 nC 1.1 W SMT Power Mosfet - ChipFET-8
Product Specification Section
onsemi NTHD3100CT1G - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi NTHD3100CT1G - Technical Attributes
Attributes Table
Fet Type: | Dual N/P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 80mΩ |
Rated Power Dissipation: | 1.1|W |
Qg Gate Charge: | 2.3nC/7.4nC |
Gate-Source Voltage-Max [Vgss]: | 12V/8V |
Drain Current: | 2.9A/3.2A |
Turn-on Delay Time: | 6.3ns/5.8ns |
Turn-off Delay Time: | 9.6ns/16ns |
Rise Time: | 10.7ns/11.7ns |
Fall Time: | 1.5ns/12.4ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.2V/1.5V |
Height - Max: | 1.1mm |
Length: | 3.05mm |
Input Capacitance: | 165pF/680pF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
3,000
$0.44
6,000+
$0.43
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount