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Infineon | IPD70R360P7SAUMA1

Manufacturer Part #

IPD70R360P7SAUMA1

N-Channel 700 V 360 mOhm 16.4 nC CoolMOS™ Power Mosfet - TO-252

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2511
Product Specification Section
Infineon IPD70R360P7SAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 59.5W
Qg Gate Charge: 16.4nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 12.5A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 100ns
Rise Time: 8ns
Fall Time: 18ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 517pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$775.00
USD
Quantity
Unit Price
2,500
$0.31
7,500
$0.305
12,500+
$0.30
Product Variant Information section