Name: Infineon IRFH5250TRPBF
Brand: Infineon
SKU: 1183562
Price: 0.57 USD
Availability: InStock

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refer to technical specifications

Manufacturer Part #

IRFH5250TRPBF

Single N-Channel 25 V 1.75 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

IRFH5250TRPBF Datasheet
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Mfr. Name:	Infineon
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 4000 per Reel Package Style: PQFN 5 x 6 mm Mounting Method: Surface Mount
Date Code:	2442

Infineon IRFH5250TRPBF - Technical Attributes

Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	25V
Drain-Source On Resistance-Max:	1.75mΩ
Rated Power Dissipation:	3.6\|W
Qg Gate Charge:	110nC
Package Style:	PQFN 5 x 6 mm
Mounting Method:	Surface Mount

Features & Applications

International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5250TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).

The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5250TRPbF 25V device delivers industry leading RDS(on) of only 1.15 mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.

The 25V IRFH5250TRPbF devices are designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5250TRPbF features ultra low RDS(on) of 1.15 mOhm (max.) combined with just 52 nC gate charge (Qg).

The IRFH5250TRPBF is a 25v, 100a, 1.15mohm, PQFN package.