BSC12DN20NS3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Infineon | BSC12DN20NS3GATMA1

Manufacturer Part #

BSC12DN20NS3GATMA1

Single N-Channel 200 V 125 mOhm 6.5 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2342
Product Specification Section
Infineon BSC12DN20NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 50|W
Qg Gate Charge: 6.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11.3A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 10ns
Rise Time: 4ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.35mm
Input Capacitance: 510pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:Order inventroy details
15,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,350.00
USD
Quantity
Unit Price
5,000+
$0.47
Product Variant Information section