BSZ22DN20NS3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

BSZ22DN20NS3GATMA1

MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ22DN20NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 225mΩ
Rated Power Dissipation: 34W
Qg Gate Charge: 4.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 6ns
Rise Time: 4ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 320pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,950.00
USD
Quantity
Unit Price
5,000+
$0.39
Product Variant Information section