IRF640NSTRLPBF in Reel by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF640NSTRLPBF

Infineon | IRF640NSTRLPBF

Manufacturer Part #

IRF640NSTRLPBF

Single N-Channel 200V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2430
Product Specification Section
Infineon IRF640NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 150W
Qg Gate Charge: 67nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 23ns
Rise Time: 19ns
Fall Time: 5.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 1160pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$344.00
USD
Quantity
Unit Price
800
$0.43
1,600
$0.425
2,400
$0.42
8,000+
$0.41
Product Variant Information section