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Manufacturer Part #

SI2392ADS-T1-GE3

MOSFET 100V .126OHM@10V 3.1A N-CH T-FET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI2392ADS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 126mΩ
Rated Power Dissipation: 1.25W
Qg Gate Charge: 5.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.2A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 10ns
Rise Time: 10ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 196pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
6,000
Factory Lead Time:
14 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,070.00
USD
Quantity
Unit Price
3,000
$0.35
6,000
$0.345
12,000
$0.34
15,000+
$0.335
Product Variant Information section