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Manufacturer Part #
SCTW90N65G2V
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:600 per Tube Package Style:TO-247-3 Mounting Method:Through Hole |
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| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCTW90N65G2V - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
Italy
HTS Code:
8541.29.00.55
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
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STMicroelectronics SCTW90N65G2V - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 119A |
| Input Capacitance: | 3380pF |
| Power Dissipation: | 565W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
21 Weeks
Quantity
Unit Price
2
$19.05
10
$18.82
30
$18.67
100
$18.51
250+
$18.23
Product Variant Information section
Available Packaging
Package Qty:
600 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole