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Infineon | IRFB52N15DPBF

Manufacturer Part #

IRFB52N15DPBF

Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2448
Product Specification Section
Infineon IRFB52N15DPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 32mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 89nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 51A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 28ns
Rise Time: 47ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 2770pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
2,600
USA:
2,600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$42.50
USD
Quantity
Unit Price
50
$0.85
200
$0.83
1,000
$0.805
2,000
$0.79
6,250+
$0.765
Product Variant Information section