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Infineon | IPP037N08N3GXKSA1

Manufacturer Part #

IPP037N08N3GXKSA1

Single N-Channel 80 V 3.5 mOhm 117 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2529
Product Specification Section
Infineon IPP037N08N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 214W
Qg Gate Charge: 117nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 45ns
Rise Time: 79ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.5V
Technology: Si
Height - Max: 9.45mm
Length: 10.31mm
Input Capacitance: 6100pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
500
USA:
500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
500
Multiple Of:
500
Total
$570.00
USD
Quantity
Unit Price
500
$1.14
1,000
$1.13
2,500
$1.12
7,500+
$1.11
Product Variant Information section